IRF7769L2TRPBF Infineon Technologies
Артикул
IRF7769L2TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 375A DIRECTFET, N-Channel 100 V 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
Цена
29 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7769L2TRPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
375A (Tc)
Rds On (Max) @ Id, Vgs
3.5mOhm @ 74A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
11560 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
2156-IRF7769L2TRPBF,SP001577490,IRF7769L2TRPBFDKR,IRF7769L2TRPBFTR,IRF7769L2TRPBFCT,IRF7769L2TRPBF-ND,IFEINFIRF7769L2TRPBF
Mounting Type
Surface Mount
Standard Package
4,000
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
DirectFET™ Isometric L8
Supplier Device Package
DirectFET™ Isometric L8
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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