IRF8113 Infineon Technologies
Артикул
IRF8113
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 17.2A 8SO, N-Channel 30 V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF8113.jpg
Supplier Device Package
8-SO
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.6mOhm @ 17.2A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2910 pF @ 15 V
FET Feature
-
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
RoHS Status
RoHS non-compliant
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
17.2A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRF8113
Standard Package
95
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
2.5W (Ta)
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