IRF9540NLPBF Infineon Technologies
Артикул
IRF9540NLPBF
Бренд
Infineon Technologies
Описание
MOSFET P-CH 100V 23A TO262, P-Channel 100 V 23A (Tc) 3.1W (Ta), 110W (Tc) Through Hole TO-262
Цена
427 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF9540NLPBF.jpg
Other Names
SP001575378
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.1W (Ta), 110W (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Rds On (Max) @ Id, Vgs
117mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRF9540
Mounting Type
Through Hole
Series
HEXFET®
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Supplier Device Package
TO-262
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±20V
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