IRFB41N15DPBF Infineon Technologies
Артикул
IRFB41N15DPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 150V 41A TO220AB, N-Channel 150 V 41A (Tc) 200W (Tc) Through Hole TO-220AB
Цена
344 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFB41N15DPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
200W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Rds On (Max) @ Id, Vgs
45mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2520 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
2156-IRFB41N15DPBF,*IRFB41N15DPBF,SP001575564,INFINFIRFB41N15DPBF
Mounting Type
Through Hole
Standard Package
1,000
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±30V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут