IRFB4227PBF Infineon Technologies
Артикул
IRFB4227PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 65A TO220AB, N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Цена
579 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFB4227PBF.jpg
Other Names
SP001565892
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
330W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Rds On (Max) @ Id, Vgs
24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4600 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRFB4227
Mounting Type
Through Hole
Series
HEXFET®
Package
Tube
Part Status
Active
Operating Temperature
-40°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±30V
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