IRFB7530PBF Infineon Technologies
Артикул
IRFB7530PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 195A TO220AB, N-Channel 60 V 195A (Tc) 375W (Tc) Through Hole TO-220AB
Цена
579 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFB7530PBF.jpg
Other Names
SP001575524
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
375W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
411 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
13703 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
IRFB7530
Mounting Type
Through Hole
Series
HEXFET®, StrongIRFET™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±20V
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