IRFH6200TRPBF Infineon Technologies
Артикул
IRFH6200TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 20V 49A/100A 8PQFN, N-Channel 20 V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
Цена
355 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFH6200TRPBF.jpg
Other Names
IRFH6200TRPBF-ND,IRFH6200TRPBFTR,SP001575628,IRFH6200TRPBFCT,IRFH6200TRPBFDKR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.6W (Ta), 156W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
10890 pF @ 10 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Base Product Number
IRFH6200
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerVDFN
Supplier Device Package
8-PQFN (5x6)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Vgs (Max)
±12V
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