IRFHM4234TRPBF Infineon Technologies
Артикул
IRFHM4234TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 25V 20A PQFN, N-Channel 25 V 20A (Ta) 2.8W (Ta), 28W (Tc) Surface Mount
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFHM4234TRPBF.jpg
Power Dissipation (Max)
2.8W (Ta), 28W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Rds On (Max) @ Id, Vgs
4.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1011 pF @ 13 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Technology
MOSFET (Metal Oxide)
Other Names
SP001572674,IRFHM4234TRPBFDKR,IRFHM4234TRPBFTR,IRFHM4234TRPBFCT
Mounting Type
Surface Mount
Series
FASTIRFET™, HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-TQFN Exposed Pad
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Vgs (Max)
±20V
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