IRFHM830TRPBF Infineon Technologies
Артикул
IRFHM830TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 21A/40A PQFN, N-Channel 30 V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount 8-PQFN-Dual (3.3x3.3)
Цена
181 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFHM830TRPBF.jpg
Package / Case
8-PowerVDFN
Supplier Device Package
8-PQFN-Dual (3.3x3.3)
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2155 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
21A (Ta), 40A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRFHM830TRPBF-ND,IRFHM830TRPBFTR,SP001566782,IRFHM830TRPBFDKR,IRFHM830TRPBFCT
Standard Package
4,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRFHM830
Power Dissipation (Max)
2.7W (Ta), 37W (Tc)
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