IRFHM8326TRPBF Infineon Technologies
Артикул
IRFHM8326TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 25A PQFN, N-Channel 30 V 19A (Ta) 2.8W (Ta), 37W (Tc) Surface Mount
Цена
126 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFHM8326TRPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.8W (Ta), 37W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta)
Rds On (Max) @ Id, Vgs
4.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2496 pF @ 10 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
IRFHM8326TRPBFTR,SP001570892,IRFHM8326TRPBFCT,IRFHM8326TRPBFDKR
Base Product Number
IRFHM8326
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Vgs (Max)
±20V
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