IPDD60R102G7XTMA1 Infineon Technologies
Артикул
IPDD60R102G7XTMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 23A HDSOP-10, N-Channel 600 V 23A (Tc) 139W (Tc) Surface Mount PG-HDSOP-10-1
Цена
734 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPDD60R102G7XTMA1.jpg
Other Names
IPDD60R102G7XTMA1TR,IPDD60R102G7,SP001632832,IPDD60R102G7XTMA1DKR,IPDD60R102G7XTMA1CT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
139W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Rds On (Max) @ Id, Vgs
102mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1320 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPDD60
Mounting Type
Surface Mount
Series
CoolMOS™ G7
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
10-PowerSOP Module
Supplier Device Package
PG-HDSOP-10-1
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,700
Vgs (Max)
±20V
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