IRFHM8329TRPBF Infineon Technologies
Артикул
IRFHM8329TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 16A/57A PQFN, N-Channel 30 V 16A (Ta), 57A (Tc) 2.6W (Ta), 33W (Tc) Surface Mount PQFN (3x3)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFHM8329TRPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.6W (Ta), 33W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
16A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs
6.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1710 pF @ 10 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
2156-IRFHM8329TRPBF,IFEINFIRFHM8329TRPBF,IRFHM8329TRPBFDKR,SP001566808,IRFHM8329TRPBFCT,IRFHM8329TRPBFTR
Mounting Type
Surface Mount
Standard Package
4,000
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PQFN (3x3)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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