IRFHS8242TRPBF Infineon Technologies
Артикул
IRFHS8242TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 25V 9.9A/21A 6PQFN, N-Channel 25 V 9.9A (Ta), 21A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)
Цена
96 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFHS8242TRPBF.jpg
Package / Case
6-PowerVDFN
Supplier Device Package
6-PQFN (2x2)
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
10.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
653 pF @ 10 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
9.9A (Ta), 21A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IRFHS8242TRPBFTR,448-IRFHS8242TRPBFCT,IRFHS8242TRPBF-ND,SP001554858,448-IRFHS8242TRPBFDKR
Standard Package
4,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRFHS8242
Power Dissipation (Max)
2.1W (Ta)
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