SPP35N10 Infineon Technologies
Артикул
SPP35N10
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 35A TO220-3, N-Channel 100 V 35A (Tc) 150W (Tc) Through Hole PG-TO220-3-1
Цена
117 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPP35N10.jpg
Supplier Device Package
PG-TO220-3-1
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1570 pF @ 25 V
FET Feature
-
Package / Case
TO-220-3
Technology
MOSFET (Metal Oxide)
Series
SIPMOS®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000013851,INFINFSPP35N10,SPP35N10X,2156-SPP35N10-IT,SPP35N10IN,SPP35N10XTIN,SPP35N10XTIN-ND,SPP35N10IN-NDR
Standard Package
500
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
150W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут