IRFI1010NPBF Infineon Technologies
Артикул
IRFI1010NPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 49A TO220AB FP, N-Channel 55 V 49A (Tc) 58W (Tc) Through Hole TO-220AB Full-Pak
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFI1010NPBF.jpg
Supplier Device Package
TO-220AB Full-Pak
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Package / Case
TO-220-3 Full Pack
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
49A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRFI1010NPBF,IFEINFIRFI1010NPBF,2156-IRFI1010NPBF,SP001570872
Standard Package
2,000
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
58W (Tc)
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