SPW35N60C3FKSA1 Infineon Technologies
Артикул
SPW35N60C3FKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 34.6A TO247-3, N-Channel 650 V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3-1
Цена
2 184 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPW35N60C3FKSA1.jpg
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-1
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 21.9A, 10V
Vgs(th) (Max) @ Id
3.9V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
34.6A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPW35N60C3IN-ND,SPW35N60C3IN,INFINFSPW35N60C3FKSA1,SP000014970,SPW35N60C3,SPW35N60C3-ND,SPW35N60C3X,SPW35N60C3XK,2156-SPW35N60C3FKSA1
Standard Package
30
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
SPW35N60
Power Dissipation (Max)
313W (Tc)
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