IRFP4227PBF Infineon Technologies
Артикул
IRFP4227PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 65A TO247AC, N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-247AC
Цена
785 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFP4227PBF.jpg
Package / Case
TO-247-3
Supplier Device Package
TO-247AC
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
98 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4600 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001560510
Standard Package
25
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 175°C (TJ)
Base Product Number
IRFP4227
Power Dissipation (Max)
330W (Tc)
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