IRFR3505PBF Infineon Technologies
Артикул
IRFR3505PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 30A DPAK, N-Channel 55 V 30A (Tc) 140W (Tc) Surface Mount D-Pak
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFR3505PBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
140W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Rds On (Max) @ Id, Vgs
13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2030 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
64-4158PBF,*IRFR3505PBF,64-4158PBF-ND,SP001567436
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
Vgs (Max)
±20V
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