IRG8P50N120KDPBF Infineon Technologies
Артикул
IRG8P50N120KDPBF
Бренд
Infineon Technologies
Описание
IGBT 1200V 80A 305W TO-247AC, IGBT - 1200 V 80 A 350 W Through Hole TO-247AC
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/IRG8P50N120KDPBF.jpg
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
80 A
Current - Collector Pulsed (Icm)
105 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 35A
Power - Max
350 W
Switching Energy
2.3mJ (on), 1.9mJ (off)
Input Type
Standard
Gate Charge
315 nC
Td (on/off) @ 25°C
35ns/190ns
Test Condition
600V, 35A, 5Ohm, 15V
REACH Status
REACH Unaffected
Supplier Device Package
TO-247AC
Series
-
Package
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001549644
Standard Package
25
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
TO-247-3
Reverse Recovery Time (trr)
170 ns
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