IRGP4750DPBF Infineon Technologies
Артикул
IRGP4750DPBF
Бренд
Infineon Technologies
Описание
IGBT 650V TO-247, IGBT - 650 V 70 A 273 W Through Hole TO-247AC
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/IRGP4750DPBF.jpg
Power - Max
273 W
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
70 A
IGBT Type
-
Current - Collector Pulsed (Icm)
105 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 35A
Switching Energy
1.3mJ (on), 500µJ (off)
Gate Charge
105 nC
Td (on/off) @ 25°C
50ns/105ns
Test Condition
400V, 35A, 10Ohm, 15V
Other Names
SP001546176,2156-IRGP4750DPBF-IT,INFINFIRGP4750DPBF
Mounting Type
Through Hole
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-40°C ~ 175°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247AC
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
25
Reverse Recovery Time (trr)
150 ns
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