IRL3502PBF Infineon Technologies
Артикул
IRL3502PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 20V 110A TO220AB, N-Channel 20 V 110A (Tc) 140W (Tc) Through Hole TO-220AB
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL3502PBF.jpg
Supplier Device Package
TO-220AB
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 7V
Rds On (Max) @ Id, Vgs
7mOhm @ 64A, 7V
Vgs(th) (Max) @ Id
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 15 V
FET Feature
-
Package / Case
TO-220-3
Technology
MOSFET (Metal Oxide)
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRL3502PBF,SP001568246
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
140W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут