IRL3705NL Infineon Technologies
Артикул
IRL3705NL
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 89A TO262, N-Channel 55 V 89A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-262
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL3705NL.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.8W (Ta), 170W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
89A (Tc)
Rds On (Max) @ Id, Vgs
10mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Other Names
*IRL3705NL
Mounting Type
Through Hole
Standard Package
50
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Supplier Device Package
TO-262
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±16V
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