IRL3714ZSPBF Infineon Technologies
Артикул
IRL3714ZSPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 20V 36A D2PAK, N-Channel 20 V 36A (Tc) 35W (Tc) Surface Mount D2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL3714ZSPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
35W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Rds On (Max) @ Id, Vgs
16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 10 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
SP001568360,*IRL3714ZSPBF
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±20V
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