IRL40B212 Infineon Technologies
Артикул
IRL40B212
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 195A TO220AB, N-Channel 40 V 195A (Tc) 231W (Tc) Through Hole TO-220AB
Цена
522 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL40B212.jpg
Other Names
2156-IRL40B212,SP001578760,INFIRFIRL40B212
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
231W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
8320 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IRL40B212
Mounting Type
Through Hole
Series
HEXFET®, StrongIRFET™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±20V
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