IRL6372PBF Infineon Technologies
Артикул
IRL6372PBF
Бренд
Infineon Technologies
Описание
MOSFET 2N-CH 30V 8.1A 8SO, Mosfet Array 2 N-Channel (Dual) 30V 8.1A 2W Surface Mount 8-SO
Цена
529 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/IRL6372PBF.jpg
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
REACH Status
REACH Unaffected
Power - Max
2W
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Rds On (Max) @ Id, Vgs
17.9mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1020pF @ 25V
RoHS Status
ROHS3 Compliant
Base Product Number
IRL6372PBF
Operating Temperature
-55°C ~ 150°C (TJ)
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
8.1A
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001568406
Standard Package
3,800
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
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