SPP08P06PHXKSA1 Infineon Technologies
Артикул
SPP08P06PHXKSA1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 8.8A TO220-3, P-Channel 60 V 8.8A (Tc) 42W (Tc) Through Hole PG-TO220-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPP08P06PHXKSA1.jpg
Supplier Device Package
PG-TO220-3
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 25 V
FET Feature
-
Package / Case
TO-220-3
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
SIPMOS®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
8.8A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFSPP08P06PHXKSA1,SPP08P06P H-ND,2156-SPP08P06PHXKSA1,SPP08P06P G-ND,SP000446908,SPP08P06P H,SPP08P06P G
Standard Package
500
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
42W (Tc)
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