IRL80HS120 Infineon Technologies
Артикул
IRL80HS120
Бренд
Infineon Technologies
Описание
MOSFET N-CH 80V 12.5A 6PQFN, N-Channel 80 V 12.5A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2)
Цена
200 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL80HS120.jpg
Package / Case
6-VDFN Exposed Pad
Supplier Device Package
6-PQFN (2x2)
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
32mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001592838,IRL80HS120TR,IRL80HS120CT,IRL80HS120DKR
Standard Package
4,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IRL80HS120
Power Dissipation (Max)
11.5W (Tc)
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