IRLB8314PBF Infineon Technologies
Артикул
IRLB8314PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 171A TO220-3, N-Channel 30 V 171A (Tc) 125W (Tc) Through Hole TO-220-3
Цена
179 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLB8314PBF.jpg
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 68A, 10V
Vgs(th) (Max) @ Id
2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5050 pF @ 15 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
171A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
64-0101PBF-ND,SP001572766,64-0101PBF
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IRLB8314
Power Dissipation (Max)
125W (Tc)
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