ISC022N10NM6ATMA1 Infineon Technologies
Артикул
ISC022N10NM6ATMA1
Бренд
Infineon Technologies
Описание
TRENCH >=100V PG-TSON-8, N-Channel 100 V 25A (Ta), 230A (Tc) 3W (Ta), 254W (Tc) Surface Mount PG-TSON-8-3
Цена
947 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/ISC022N10NM6ATMA1.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta), 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds On (Max) @ Id, Vgs
2.24mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6880 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 254W (Tc)
FET Type
N-Channel
Package / Case
8-PowerTDFN
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Base Product Number
ISC022N
Other Names
SP005339558,448-ISC022N10NM6ATMA1CT,448-ISC022N10NM6ATMA1DKR,448-ISC022N10NM6ATMA1TR
Standard Package
5,000
ECCN
EAR99
HTSUS
8541.29.0095
Operating Temperature
-55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSON-8-3
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