ISP650P06NMXTSA1 Infineon Technologies
Артикул
ISP650P06NMXTSA1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 3.7A SOT223-4, P-Channel 60 V 3.7A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
Цена
298 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/ISP650P06NMXTSA1.jpg
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
4V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 30 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-ISP650P06NMXTSA1DKR,ISP650P06NMXTSA1-ND,SP004987266,448-ISP650P06NMXTSA1CT,448-ISP650P06NMXTSA1TR
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
ISP650
Power Dissipation (Max)
1.8W (Ta), 4.2W (Tc)
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