SPB80P06PGATMA1 Infineon Technologies
Артикул
SPB80P06PGATMA1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 80A TO263-3, P-Channel 60 V 80A (Tc) 340W (Tc) Surface Mount PG-TO263-3-2
Цена
768 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPB80P06PGATMA1.jpg
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
23mOhm @ 64A, 10V
Vgs(th) (Max) @ Id
4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs
173 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5033 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000096088,SPB80P06P G-ND,SPB80P06PGATMA1CT,SPB80P06PGXT,SPB80P06PGINDKR-ND,SPB80P06PGINCT,SPB80P06P G,SPB80P06PG,SPB80P06PGINDKR,SPB80P06PGATMA1DKR,SPB80P06PGATMA1TR,SPB80P06PGINDKRINACTIVE,SPB80P06PGINCT-ND,SPB80P06PGINTR,SPB80P06PGINTR-ND
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
SPB80P06
Power Dissipation (Max)
340W (Tc)
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