SPD06N80C3BTMA1 Infineon Technologies
Артикул
SPD06N80C3BTMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 800V 6A TO252-3, N-Channel 800 V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3-11
Цена
382 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPD06N80C3BTMA1.jpg
Supplier Device Package
PG-TO252-3-11
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
785 pF @ 100 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-SPD06N80C3BTMA1,SP000318350,SP000077606,SPD06N80C3INTR-NDR,SPD06N80C3XTINCT,SPD06N80C3BTMA1TR,SPD06N80C3INCT,SPD06N80C3,SPD06N80C3INDKR,SPD06N80C3BTMA1DKR,INFINFSPD06N80C3BTMA1,SPD06N80C3XTINTR,SPD06N80C3INDKR-NDR,SPD06N80C3INTR-ND,SPD06N80C3XTINCT-N
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
83W (Tc)
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