SPD07N20 Infineon Technologies
Артикул
SPD07N20
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 7A TO252-3, N-Channel 200 V 7A (Tc) 40W (Tc) Surface Mount PG-TO252-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPD07N20.jpg
Supplier Device Package
PG-TO252-3
REACH Status
REACH Affected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
31.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPD07N20XT,SPD07N20-ND,SPD07N20INCT,SPD07N20INDKR,SPD07N20INTR,SP000077394,SPD07N20NT
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
40W (Tc)
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