SPD11N10 Infineon Technologies
Артикул
SPD11N10
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 10.5A TO252-3, N-Channel 100 V 10.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPD11N10.jpg
Supplier Device Package
PG-TO252-3-11
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs
18.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
Series
SIPMOS®
Package
Tape & Reel (TR)
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPD11N10XT,SPD11N10BUMA1,SPD11N10INCT,SPD11N10INTR,SP000013847,SPD11N10XT-ND
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
50W (Tc)
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