SPD18P06PGBTMA1 Infineon Technologies
Артикул
SPD18P06PGBTMA1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 18.6A TO252-3, P-Channel 60 V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3
Цена
250 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPD18P06PGBTMA1.jpg
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
18.6A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPD18P06P G,SPD18P06P G-ND,SPD18P06P GTR-ND,SPD18P06P GCT-ND,SPD18P06P GDKR-ND,SPD18P06PGBTMA1DKR,SPD18P06P GDKR,SPD18P06PGBTMA1CT,SPD18P06P GCT,SPD18P06PG,SPD18P06PGBTMA1TR,SP000443926
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
SPD18P06
Power Dissipation (Max)
80W (Tc)
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