SPN04N60S5 Infineon Technologies
Артикул
SPN04N60S5
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 800MA SOT223-4, N-Channel 600 V 800mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPN04N60S5.jpg
Supplier Device Package
PG-SOT223-4
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
5.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Feature
-
Package / Case
TO-261-4, TO-261AA
Technology
MOSFET (Metal Oxide)
RoHS Status
RoHS non-compliant
Series
CoolMOS™
Package
Tape & Reel (TR)
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000012414,SP000101882,SPN04N60S5T
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
1.8W (Ta)
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