SPP20N60S5 Infineon Technologies
Артикул
SPP20N60S5
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 20A TO220-3, N-Channel 650 V 20A (Tc) 208W (Tc) Through Hole PG-TO220-3-1
Цена
1 133 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPP20N60S5.jpg
Supplier Device Package
PG-TO220-3-1
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
103 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
FET Feature
-
Package / Case
TO-220-3
Technology
MOSFET (Metal Oxide)
Series
CoolMOS™
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPP20N60S5XTIN,SPP20N60S5X,SPP20N60S5XTIN-ND,SPP20N60S5BKSA1,SPP20N60S5IN-NDR,SPP20N60S5IN
Standard Package
500
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
208W (Tc)
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