SPP80P06PHXKSA1 Infineon Technologies
Артикул
SPP80P06PHXKSA1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 80A TO220-3, P-Channel 60 V 80A (Tc) 340W (Tc) Through Hole PG-TO220-3-1
Цена
672 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPP80P06PHXKSA1.jpg
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3-1
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
23mOhm @ 64A, 10V
Vgs(th) (Max) @ Id
4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs
173 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5033 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
SIPMOS®
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPP80P06PH,SPP80P06P G,SP000441774,SPP80P06P H,SPP80P06P H-ND,SPP80P06P G-ND
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
SPP80P06
Power Dissipation (Max)
340W (Tc)
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