SPS01N60C3 Infineon Technologies
Артикул
SPS01N60C3
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 800MA TO251-3, N-Channel 650 V 800mA (Tc) 11W (Tc) Through Hole PG-TO251-3-11
Цена
19 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPS01N60C3.jpg
Supplier Device Package
PG-TO251-3-11
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
100 pF @ 25 V
FET Feature
-
Package / Case
TO-251-3 Stub Leads, IPak
Technology
MOSFET (Metal Oxide)
Series
CoolMOS™
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
800mA (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-SPS01N60C3-IT,SP000235876,INFINFSPS01N60C3
Standard Package
1,500
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
11W (Tc)
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