SPU11N10 Infineon Technologies
Артикул
SPU11N10
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 10.5A TO251-3, N-Channel 100 V 10.5A (Tc) 50W (Tc) Through Hole P-TO251-3-1
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPU11N10.jpg
Supplier Device Package
P-TO251-3-1
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs
18.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
FET Feature
-
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Technology
MOSFET (Metal Oxide)
Series
SIPMOS®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000013848,SPU11N10X
Standard Package
1,500
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
50W (Tc)
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