IRFS31N20DPBF International Rectifier
Артикул
IRFS31N20DPBF
Бренд
International Rectifier
Описание
HEXFET N-CHANNEL POWER MOSFET, N-Channel 200 V 31A (Tc) 3.1W (Ta), 200W (Tc) Surface Mount D2PAK
Цена
127 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFS31N20DPBF.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2370 pF @ 25 V
FET Feature
-
Supplier Device Package
D2PAK
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
HEXFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
RoHS Status
Not applicable
ECCN
EAR99
Other Names
2156-IRFS31N20DPBF,IFEIRFIRFS31N20DPBF
Standard Package
1
REACH Status
REACH Unaffected
Power Dissipation (Max)
3.1W (Ta), 200W (Tc)
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