IXFB30N120P IXYS
Артикул
IXFB30N120P
Бренд
IXYS
Описание
MOSFET N-CH 1200V 30A PLUS264, N-Channel 1200 V 30A (Tc) 1250W (Tc) Through Hole PLUS264™
Цена
8 249 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFB30N120P.jpg
Supplier Device Package
PLUS264™
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
310 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
22500 pF @ 25 V
FET Feature
-
Package / Case
TO-264-3, TO-264AA
REACH Status
REACH Unaffected
Series
HiPerFET™, Polar
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFB30
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
25
Power Dissipation (Max)
1250W (Tc)
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