IXFH6N100 IXYS
Артикул
IXFH6N100
Бренд
IXYS
Описание
MOSFET N-CH 1000V 6A TO247AD, N-Channel 1000 V 6A (Tc) 180W (Tc) Through Hole TO-247AD (IXFH)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFH6N100.jpg
Supplier Device Package
TO-247AD (IXFH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Other Names
IXFH6N100-NDR
Series
HiPerFET™
Package
Tube
Part Status
Not For New Designs
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFH6
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Power Dissipation (Max)
180W (Tc)
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