IXFN200N07 IXYS
Артикул
IXFN200N07
Бренд
IXYS
Описание
MOSFET N-CH 70V 200A SOT-227B, N-Channel 70 V 200A (Tc) 520W (Tc) Chassis Mount SOT-227B
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFN200N07.jpg
Supplier Device Package
SOT-227B
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
70 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
480 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9000 pF @ 25 V
FET Feature
-
Package / Case
SOT-227-4, miniBLOC
REACH Status
REACH Unaffected
Other Names
IXFN200N07-NDR
Series
HiPerFET™
Package
Tube
Part Status
Not For New Designs
Mounting Type
Chassis Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFN200
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
10
Power Dissipation (Max)
520W (Tc)
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