IXFP5N100P IXYS
Артикул
IXFP5N100P
Бренд
IXYS
Описание
MOSFET N-CH 1000V 5A TO220AB, N-Channel 1000 V 5A (Tc) 250W (Tc) Through Hole TO-220-3
Цена
944 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXFP5N100P.jpg
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33.4 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1830 pF @ 25 V
FET Feature
-
Package / Case
TO-220-3
REACH Status
REACH Unaffected
Other Names
-IXFP5N100P
Series
HiPerFET™, Polar
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXFP5N100
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
50
Power Dissipation (Max)
250W (Tc)
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