IXTF1N250 IXYS
Артикул
IXTF1N250
Бренд
IXYS
Описание
MOSFET N-CH 2500V 1A ISOPLUS I4, N-Channel 2500 V 1A (Tc) 110W Through Hole ISOPLUS i4-PAC™
Цена
9 962 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
-
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
2500 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1660 pF @ 25 V
FET Feature
-
Supplier Device Package
ISOPLUS i4-PAC™
Package / Case
i4-Pac™-5 (3 Leads)
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
25
Other Names
Q7319967A
REACH Status
REACH Unaffected
Power Dissipation (Max)
110W
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