IXTH50N20 IXYS
Артикул
IXTH50N20
Бренд
IXYS
Описание
MOSFET N-CH 200V 50A TO247, N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTH50N20.jpg
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
45mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4600 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Series
MegaMOS™
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTH50
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Other Names
IXTH50N20-NDR
Power Dissipation (Max)
300W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут