IXTH52N65X IXYS
Артикул
IXTH52N65X
Бренд
IXYS
Описание
MOSFET N-CH 650V 52A TO247, N-Channel 650 V 52A (Tc) 660W (Tc) Through Hole TO-247 (IXTH)
Цена
1 870 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTH52N65X.jpg
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
68mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
113 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4350 pF @ 25 V
FET Feature
-
Package / Case
TO-247-3
REACH Status
REACH Unaffected
Series
Ultra X
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTH52
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
30
Power Dissipation (Max)
660W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут