IXTP01N100D IXYS
Артикул
IXTP01N100D
Бренд
IXYS
Описание
MOSFET N-CH 1000V 100MA TO220AB, N-Channel 1000 V 100mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-220-3
Цена
1 118 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IXTP01N100D.jpg
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
100mA (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1000 V
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
110Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 25 V
FET Feature
Depletion Mode
REACH Status
REACH Unaffected
Other Names
607074,Q1614635,IXTP01N100D-NDR
Series
Depletion
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IXTP01
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Warning Information
Standard Package
50
Power Dissipation (Max)
1.1W (Ta), 25W (Tc)
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