GAN041-650WSBQ Nexperia
Артикул
GAN041-650WSBQ
Бренд
Nexperia
Описание
GAN041-650WSB/SOT429/TO-247, N-Channel 650 V 47.2A 187W Through Hole TO-247-3
Цена
3 581 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/GAN041-650WSBQ.jpg
Moisture Sensitivity Level (MSL)
1 (Unlimited)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
REACH Status
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C
47.2A
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Technology
GaNFET (Cascode Gallium Nitride FET)
Power Dissipation (Max)
187W
Standard Package
30
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
1727-GAN041-650WSBQ,934661752127
FET Feature
-
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